Brian S. Swartzenruber

Scientist, Center for Integrated Nanotechnologies
Science Thrust: Nanoscale Electronics & Mechanics

Phone: 505-844-6393
Fax: 505-284-7778
bsswart@sandia.gov

P.O. Box 5800  MS 1303                                                        
Sandia National Laboratories                                                  
Albuquerque, NM  87185


 

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Research

Brian’s research interests have focused on the structure and thermodynamics of semiconductor surfaces, atomic-scale kinetics of surface diffusion, the structure and stability of nanostructures, and electronic transport in nanowires and nanoscale contacts. His current activities center on using a two-probe nanomanipulator inside of a field-emission scanning electron microscope to measure electron conduction in nanoscale structures in their as-grown configurations, and to place nanostructures in configurations inaccessible through other means in order to perform ex situ thermal and electronic transport measurements. He is also responsible for the Scanning Probe Microscopy Lab containing: a DI3000 atomic force microscope with scanning-capacitance and conducting-probe capabilities; several scanning tunneling microscopes; and an interfacial force microscope.

Selected Publications

  • Unusually Strong Space-Charge-Limited Current in Thin Wires, A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, Phys. Rev. Lett., 101(7), 076802 (2008).
  • Diameter-Dependent Electronic Transport of Au-catalyzed/Ge-nanowire Schottky Diodes, F. Léonard, A.A. Talin, B.S. Swartzentruber, S.T. Picraux, Phys. Rev. Lett.,  102(10), 106805 (2009).
  • GaN Nanowire Light Emitting Diodes Based on Templated and Scalable Nanowire Growth Process, S. D. Hersee, M. Fairchild, A. K. Rishinaramangalam, M. S. Ferdous, L. Zhang, P. M. Varangis, B. S. Swartzentruber, and A. A. Talin, Electronics Letters, 45(1), 75 (2009).
  • Electrical Transport in GaN Nanowires Grown by Selective Epitaxy, A. A. Talin, B. S. Swartzentruber, F. Léonard, X. Wang, and S. D. Hersee, J. Vac. Sci. Tech. B (in press).
  • One-Dimensional Defect-Meditated Diffusion of Si Adatoms on the Si(111)-5x2-Au Surface, E. Bussmann, S. Bockenhauer, F. J. Himpsel, and B. S. Swartzentruber, Phys. Rev. Lett., 101(26), 266101 (2008).

Selected User Projects

  • Conductivity Measurements of Cooperative Binary Ionic Nanomaterials, John Shelnutt, Sandia National Laboratories.
  • Characterization and Device Integration of Vertical GaN Nanorods, Steve Hersee, University of New Mexico.
  • Nanomanipulator and AFM studies of resistive switching in Ag/TiO2 thin films, Tito Busani, New Mexico Institute of Mining and Technology.