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Los Alamos National LaboratoryCenter for Integrated Nanotechnologies
Helping you understand, create, and characterize nanomaterials


CINT capabilities are provided to users through the CINT Scientists and other technical contacts.

CINT post-doc

CINT user, Aditya Mohite, prepares to characterize how well a device assembled from nanoscale building blocks converts light into electricity.

Use the links to the right to search for brief descriptions of these capabilities and the associated staff who use them for their nanoscience integration research. In some cases, one capability may be used by several staff members in distinct ways; hence we provide multiple contact names in order that the prospective user may determine the appropriate staff member through which the capability may be accessed.

We strongly encourage prospective CINT users to contact the person(s) associated with a capability of interest in order ensure that the capability will meet the needs of the user. We welcome user proposals that involve multiple capabilities.

CINT has made arrangements for CINT users to also access other National User Facilities at Los Alamos and Sandia National Laboratories. Prospective users whose research would require capabilities at CINT and these other User Facilities can submit one proposal to access the combined facilities.

New Capabilities

Expitaxy for Nanoscience: To expand its capabilities in epitaxy, CINT is adding Metal Organic Chemical Vapor Deposition (MOCVD). This capability enables the growth of complex nanostructures based on the III-V and III-nitride (AlGaInN) semiconductor materials systems, including nanowires (NWs) and quantum dots (QDs). Capabilities are available for the preparation of structures involving diverse semiconductor families such as large band gap semiconductors (i.e., III-Nitrides, boron nitride (BN)) and low band gap materials (e.g., InGaAs/InP, III-antimonides). This new CINT capability will complement the existing MBE effort and allow for the growth of complex nanostructures in all of the III-V semiconductor materials. 

Contact: Dr. Dan Koleske: