Tom Picraux

Chief Scientist, Center for Integrated Nanotechnologies
Science Thrust: Nanoscale Electronics & Mechanics

Phone: 505-665-8554
Fax: 505-665-9030

Los Alamos National Laboratory
Los Alamos, NM 87545


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Tom’s research interests have focused on studies of electronic thin films, ion beam modification of materials, epitaxy, and nanostructured materials. His current activities center on nanoscale electronic materials, including Si/Ge nanowire and nanowire heterostructure growth mechanisms, kinetics, strain distributions, chemical doping, optical and electrical properties, bandstructure engineering, and nanowire integration into devices. He is also interested in nanoscale self assembly, nanoporous thin films formed by electrochemical dealloying, and tailored, switchable hydrophobicity of nanowire surfaces.

Selected Publications

  • Diameter-Dependent Electronic Transport of Au-catalyzed/Ge-nanowire Schottky Diodes, F. Leonard, A.A. Talin, B.S. Swartzentruber, S.T. Picraux, Phys. Rev. Lett. 102, (2009).
  • Strain Distributions and Electronic Property Modifications in Si/Ge Axial Nanowire Heterostructures, J. G. Swadener and S. T. Picraux, J. Appl. Phys. 105, 044310 (2009).
  • Vertical Growth of Ge Nanowires from Biotemplated Au Nanoparticle Catalysts, J. of the Amer. Chem. Soc. 130, 10488 (2008).
  • Ultrafast Electron and Hole Dynamics in Germanium Nanowires, R.P. Prasankumar, S. Choi, S.A. Trugman, S.T. Picraux, A.J. Taylor, Nano Lett. 8, 1619 (2008).
  • ExSitu Doping of Silicon Nanowires With Boron, S. Ingole, P. Manandhar, S.B. Chikkannanavar, E.A. Akhadov, D.J. Smith, S.T. Picraux, J. Appl. Phys. 103, 104302 (2008).
  • The Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence, P. Aella, S. Ingole, W. T. Petuskey, S.T. Picraux, Adv. Matls. 19, 2603-2607 (2007).
  • Self Assembly of Nanowire-Metal Contacts Using Electrodeposition, S. Ingole, P. Aella, Sean J. Hearne, S.T. Picraux, Appl. Phys. Lett. 91, 33106 (2007).

Selected User Projects:

  • Bionanofabrication of Semiconducting Nanowires via S-layer Protein/Nanoparticle Templates, Carl Batt, Cornell University
  • Tunneling Transport and Strain Relaxation in SiGe and Ge Nanowires, Alex Zaslavsky, Brown University
  • Doped Si/Ge Nanowires for Functional Nanodevices, Stephen Goodnick, Arizona State University