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Center for Integrated Nanotechnologies

Helping you understand, create, and characterize nanomaterials

Electron Beam Lithography

The JEOL JBX-6300FS electron beam lithography system is a state-of-the-art tool capable of field emission operation at 100 kV acceleration voltage

With a minimum spot size of less than 3 nm, the system is capable of line widths less than 8 nm in resist. A 19-bit beam deflection amplifier allows beam steps down to 1.25 Å at 100 kV. Overlay and field stitching accuracy is better than 20 nm in high resolution writing mode. This instrument, in association with etch and deposition capabilities, provides powerful nanofabrication of a wide variety of materials and applications.

Capabilities include:

Can handle nominally rectangular samples from 10–25 mm in side length.
Can handle wafers of 2”, 3”, 4”, and 6” in diameter.
Positive resists include ZEP-520A, PMMA, and PMGI.
Negative resists include NEB-31A.

Due to very high demand, this capability is presently available to current CINT users only. New CINT users can request the electron beam lithography capability by special arrangement with the Lead CINT scientist on their proposal. Technical questions may be directed to the specialist listed.

Contact: Anthony James