With a minimum spot size of less than 1.3 nm, the system is capable of line widths less than 6 nm in resist. A 200MHz beam deflection amplifier allows beam data increments of 1nm/0.5nm/0.25nm at 50kV/100 kV/200kV in High Throughput Mode and 0.1nm/0.05nm/0,025nm 50kV/100 kV/200kV in High Resolution Mode. Overlay and field stitching accuracy is better than +/- 8 nm in high resolution writing mode (100kV & 200kV). This instrument, in association with other system, provides powerful nanofabrication of a wide variety of materials and applications.

Capabilities include:

• Environmental Controlled Enclosure: Temperature regulation to better than 0.1C.
• Can handle nominally rectangular samples from 5–25 mm in side length.
• Can handle wafers of 2”, 3”, 4”, and 6” in diameter.
• Positive resists include ZEP-520A, PMMA, and co-polymers.
• Negative resists include NEB-31A, Ma-N 2400 series, HSQ/FOX, and AR-N 7520-18/ AR-N 7500-18.

Due to very high demand, this capability is presently available to current CINT users only. New CINT users can request the electron beam lithography capability by special arrangement with the lead CINT scientist on their proposal. Technical questions may be directed to the specialist listed.

Contact: Anthony James