Features of the CVD system for Si/Ge nanowire heterostructures guarantee precise control of electrical doping concentration and interfacial widths of heterostructure, uniformity in a substrate, and reproducible growth of sophisticated nanowire heterostructures.

Capabilities include:

•  3” wafer-loadable cold wall reactor for Si-Ge nanowire heterostructures.
• Reproducible control of growth temperature.
• In-situ optical growth monitoring using reflectance measurement, precisely controlled precursor flow regulation.
• Fast switching of process gases.
• Adjustable process chamber pressure in a wide range from UHV to LPCVD. 
• Growth method based on the vapor-liquid-solid (VLS) technique, which uses metallic nanodot seeds to control the location and size of the nanowires.
• Si-Ge CVD reactor is not limited to for nanowire growth only. The cold wall reactor and replaceable substrate holders enable users to utilize the CVD reactor for high-quality Si-Ge thin film growth. 
• Si-Ge CVD reactor can be used to prepare nanomaterial−thin film hybrid structures of which physical properties are emerging.
• Flowing metallorganic precursors to control elemental composition of metal catalyst seeds for nanowire growth.
• In-situ prepared alloyed catalyst enables users to achieve abrupt interfaces (interfacial width is much smaller than size of catalyst seed) at the junctions in a single nanowire.

Technical Specifications:

• A cold-wall stainless steel chamber.
• Heater: Resistive up to 800 C.
• Maximum loadable substrate: 4" wafer.
• Precursors: Silane (SiH4), Germane (GeH₄), Phosphine (PH3), Diborane (B2H5) diluted in ultrahigh purity hydrogen (H2).
• Vacuum system: Two rotary vane pumps and one turbomolecular pump.
• Recipe editor.

Contact: Jinkyoung Yoo

Research Highlight:
Progressive inward growth of solid-electrolyte interphase causes capacity fading of large volume changing anodes
He, Y.; Jiang, L.; Chen, T.; Xu, Y.; Jia, H.; Yi, R.; Xue, D.; Song, M.; Genc, A.; Bouchet-Marquis, C.; Pullan, L.; Tessner, T.; Yoo, J.; Li, X.; Zhang, J.-G.; Zhang, S.; Wang, C. Nature Nanotechnology 2021, 16 (10), 1113–1120. doi.org/10.1038/s41565-021-00947-8