Deposition/Anneal Capabilities

• SPUT2 Sputter Coater (Anatech — Room 1504)
  • Sputtering tool for Au or Au/Pd SEM sample preparation up to 100 mm.

• RTA 1 (Qualiflow-Jiplec Jetfirst 100 – Room 1525)
  • Rapid thermal processing tool, maximum substrate diameter 100 mm (stand alone), SiC coated graphite susceptor with TC temperature control and low temperature pyrometer process monitoring. Upper operating limit is 1000°C , atmospheric or reduced pressure processing in an Ar or 5% H₂/N₂ forming gas environment.

• EG1X Ebeam PVD Evap (10kV — Room 1525)
  • Six-pocket ebeam hearth, glass bell jar. Precision horizontal theta angle positioning, single stage for up to 100 mm diameter or multiple smaller samples. Automated oxidation processing sequences (Josephson Junction Formation), samples are typically secured to a carrier with metal clips or Kapton tape. Semiautomated deposition, turret, and pressure control. Psuedo loadlock configuration provides accelerated pump down into mid 1E-8 Torr base pressure region (sources must be preloaded at least 12 hours prior to loading material to run). Ebeam materials: Ag, Al, AlSi, Al₂O₃, Au, Co, Cr, Cu, Fe (limited), Ge, HfO₂, Ta₂O₅, Ni, Pd, Pt, Si, SiO₂, SiN, Ti.

• EG2 Ebeam and Thermal Evaporator (KJL Custom 9kV — Room 1525)
  • Six-pocket ebeam hearth plus 2 thermal sources with co-deposition capabilities. Water cooled metal bell jar with 3 rotating stages. Each stage can hold one 5” diameter sample or multiple smaller samples. Stages face down; samples are typically secured with metal clips or Kapton tape to a carrier. Ebeam materials: Ag, Al, Au, Co, Cr, Ge, Mo, Ni, Pd, Pt, Ti, W. Thermal boat materials: Al, Cr, Au. Thermal boats are limited to 500–1000 Å (without stage rotation), depending on material. Machine undergoing a control system renovation, available on request for thermal evaporation. Updates/upgrades in FY22–23 New solid-state power supply, sweep and process controller. Automated process control, improved cross contamination prevention and control.

• EG3 ebeam evaporator (Temescal FCS2000 — Room 1527)
  • Fully automatic processing system, six-pocket ebeam hearth with pop-top mechanism and load lock to protect source material integrity and to minimize pump down time. Configurable for lift off processing (13 x 100 mm) or conformal deposition processing (12 x 100 mm). Small samples can be accommodated with the use of a special mounting fixture or 100 mm Si substrate carriers. Standard source materials include: Au, Pt, Au, plus three empty pockets for other material combinations on request. Source material configuration is not operator definable and must be scheduled with tool owner. System has an integrated DC ion mill for sample pre-cleaning and Kaufman-assist ebeam evaporation.

• Sputter 1 (KJL PVD-75 — Room 1525)
  • Three-gun RF/DC physical vapor deposition. Machine configured to allow O₂ or N₂ reactive sputtering, dielectric thin films and co-deposition possible. PVD Materials: Al, Al₂O₃, Ag, Au, Bi, Bi₂O₃, Cu, In, Ir, ITO (90%/10%), Nb, Ni, Ni/Cr (80%/20%), Mo, Pd, Pt, PTFE, Si, SiO₂, SiN, Ta, Ti, TiN, TiO₂ W, Sb, ZnO, ZnO/AL₂O₃ (98%/2%) and ZTO. Other materials possible with user supplied target.

• Diffusion/Annealing Furnace 1 (Tystar Titan 4600 — Room 1532)
  • Four-stack combination LPCVD, thermal oxidation and anneal horizontal furnace.  Accommodates small pieces through 150 mm substrates.
    • Tube 1 – Atmospheric, thermal oxidation dry and steam, forming gas or argon anneal to 1100°C.
    • Tube 2 – LPCVD silicon nitride, low stress and stoichiometric.
    • Tube 3 – LPCVD poly silicon, undoped. Tube 4 – LPCVD undoped silicon dioxide, TEOS source.

• Atomic Layer Deposition Reactor (Picosun Sunale R150 ALD — Room 1527)
  • Thermal, plasma-assist, and thermal soak modes, three-dimensional, highly conformal metal, low and high K dielectric thin film deposition system. System deposits thin films one atomic layer at a time through sequential self-limiting chemical reactions. Maximum film thickness of 100 nm, typical 1–10 nm, sample size from small pieces to 150 mm. Temperature range 60–500°C, nominal thermal ALD operating window 200–300°C. Available thin films include Al₂O₃, HfO₂, SiO₂, TiO₂ (amorphous, Anatase, Rutile), Ta₂O_5, Nb₂O_5, TiN and Pt. Other nitrides are under development.

• Atomic Layer Deposition Reactor 2 (Veeco Savannah — Room 1530)
  • Dedicated Al₂O₃ and HfO₂ thermal only to support the most contamination sensitive thin film deposition needs. System deposits thin films one atomic layer at a time through sequential self-limiting chemical reactions. Maximum film thickness of 100 nm, typical 1–10 nm, sample size from small pieces to 100 mm. Target operating temperature range 200–300°C.

• Thermal Processing System (MTI-1200 Automated Vacuum/ATM Oven — Room 1525)
  • Up to 1000°C, thermal oxidation (wet/dry), forming gas anneal, nitrogen/argon anneal, 80/20 atmosphere, Si doping, vacuum or atmospheric processing of a variety of materials and compounds including powdered materials. Small sample up to 150 mm, up to 25–100 mm substrates, a very flexible thermal processing system. Use normal thermal processing needs or to test the thermal effects on a material or device to assess risk of contamination before committing the device to more sensitive processing system. Gasses include Argon, Nitrogen, Forming (3.8% H₂/N₂), Oxygen and steam.

• Thermal Evaporator (Room 1525)
  • Supports lab’s thermal PVD needs (allowing conversion of EG2 to EBeam only with new hardware).

Contact: John Nogan