Dry Etching Capabilities

• Low Temperature ICP CVD (Updated and Improved Trion Orion III w/load lock — Room 1527)
  
  • Samples processing temperature range is RT– 400 °C, low stress (0–200 MPA), substrate surface temperature rise is approximately 40 °C above setpoint. System accommodates sample sizes ranging from pieces through 200 mm diameter. Silane-based dielectric thin film processes include low stress ammonia free silicon nitride and silicon dioxide at standardized processing temperatures of 100 °C, 250 °C, and 350 °C. Other system features include pre-deposition fluorine based reactive ion etching and/or argon ion milling (cap removal/surface cleaning) and processes refinements to better control dielectric to substrate interface conditions.  

• Fluorine ICP/RIE (Updated and Improved Trion Minilock III with load lock — Room 1527)
  • Hybrid reactive ion etch system accommodates up to 200 mm sample size. Typical materials processed include silicon nitride, silicon dioxide, silicon, titanium, tungsten, photoresists, and other organic materials. Process chemistry will also etch LiNbO3, Mo, MoSi2, Nb, Nb2O5, WSi and SiC. Process gasses include CF4, CHF3, SF6, high and low flow O2, Ar and He. Operates ICP only, RIE only or a combination ICP/RIE.  Integrated 670 nm laser interferometer with modeling software for precise etch depth monitoring and endpoint detection. 0–100°C processing temperature range.

• Chlorine ICP/RIE 1 (Trion Minilock III with load lock — Room 1527)
  • Hybrid reactive ion etch system accommodates up to a 200 mm sample size. Typical materials processed include Al and a variety of III-V compound semiconductors. Process gasses include Cl2, BCl3, O2, Ar, and He. Operates ICP only, RIE only or a combination ICP/RIE mode. 0–200 °C processing temperature range. Integrated 670 nm laser interferometer with modeling software for precise etch depth monitoring and endpoint detection.

• RIBE 1 (TBD — Room 1530)
  • Reactive ion etch system accommodates up to a 200 mm sample size. Typical materials processed include a variety of III-V compound semiconductors in two operating modes, high aspect ratio (30:1), through wafer. Planned process gasses to include Cl2, BCl3, HBr, SiCl4, CH4, H2, O2, and Ar. Operates ICP only, RIE only or a combination ICP/RIE mode. Integrated OES (Optical Emissions Spectrometer), process temperature range –150 °C to 400 °C.

• ICP SiDRIE - Bosch Etch (Modified Plasmatherm SLR-770 — Room 1527) 
  • High aspect ratio silicon deep reactive ion etch configured for 100 mm processing. Smaller sample processing possible when bonded with photoresist to a 100 mm carrier substrate. Maximum etch rate of 3-4 µm/minute, etch depth limited to approximately 300 µm depending on exposed area. System also supports high aspect ratio (30:1) silicon nanowire formation.

• DC Argon Ion Mill/Ion Beam Sputter (Intlvac — Room 1527)
  • 4 cm DC argon ion source with ion optics for anisotropic physical etching of a variety of materials/compounds that lack volatility in standard chlorine or fluorine etch processes or pose a contamination risk to typical lab RIE processing chambers. Median beam current density of 1.0–1.5 mA/cm² (Focused) /0.6–0.8 mA/cm² (Defocused), 100 mm maximum substrate diameter defocused mode, <2” diameter in focused mode, small sample processing possible with carrier mounting. System also provides a means for HV annealing up to 900 °C. Single target Ion Beam Sputtering, 1 cm² sample, with substrate heating to 900 °C. Universal 3” target, 30+ materials library.

• Down Stream Plasma Ash (PT Batchtop with Low Frequency Plasma Source — Room 1530)
  • Organic, BCB strip and device cleaning with minimal plasma damage. Isotropic dielectric and fluorine reactive ion etch. System can accommodate up to a 150 mm sample size, 100 mm with better than 20% WTW uniformity. PR ash rate approximately 2500–3000 Å/minute. Nominal processing temperature is 150 °C, electrode temperature can be adjusted from room temperature up to approximately 250 °C to control the reaction rate. Process gasses include CO₂, O₂, N₂O, and CF₄. New control system pending.

• Fluorine RIE (Oxford Plasmalab 80 Plus — Room 1530)
  • Reactive ion etch system accommodates up to a 150 mm sample size. Typical materials processed include silicon nitride, silicon dioxide, silicon, titanium, tungsten, photoresists, and other organic materials. System accommodates Au physical etching requirements. Process gasses include CHF₃, CF₄, SF₆, O₂, and Ar. 

• Barrel Ash (Anatech — Room 1523)
  • Weak organic surface cleaning, post develop surface descum. Process gas O₂. System can accommodate up to a 150 mm sample size. Maximum PR ash rate of approximately 250–300 Å/minute at 300 watts. Higher ash rates (x10) are supported by LOLA.

• XeF2 Etch Reactor (SPTS Xact E2 — Room 1530)

  • High SiN selectivity, Si isotropic etch reactor in support of MEMS/NEMS fabrication. Onsite, in lab, installation/startup planned for 2023.

• Oxford RIBE Cobra III/V (Room 1530)

  • Reactive ion etch system. Typical materials processed include a variety of III-V compound semiconductors in two operating modes, high aspect ratio (30:1), through wafer. Planned process gasses to include Cl2, BCl3, HBr, SiCl4, CH4, H2, O2, and Ar. Operates ICP only, RIE only or a combination ICP/RIE mode. Integrated OES (Optical Emissions Spectrometer), process temperature range –150 °C to 400 °C.

• Oxford SiDRIE Estrales (Room 1530)

  • High aspect ratio silicon deep reactive ion etch configured for 100 mm processing. Smaller sample processing possible when bonded with photoresist to a 100 mm carrier substrate. Maximum etch rate of 3-4 µm/minute, etch depth limited to approximately 300 µm depending on exposed area. System also supports high aspect ratio (30:1) silicon nanowire formation. 

•  Modified Plasmatherm SLR-770 — Room 1527
  • Hybrid reactive ion etch system accommodates up to a 100mm Typical materials processed include Al and a variety of III-V compound semiconductors. Process gasses include Cl2, BCl3, O2, Ar, and He. Operates ICP only, RIE only or a combination ICP/RIE mode. Modifications projected to be completed FY26-27

Contact: Tzu-Ming Lu

1. User provides the accepted user project number and list of desired tools to be accessed to the IL Manager.

2. The IL Manager will send a list of the required corporate-mandated classes to the user and notify the training coordinator of the student's needs. These classes must be completed prior to getting unescorted access to the IL.

3. The user completes all of the assigned corporate-mandated training classes.

4. User provides proof of training, i.e. date of completion, to the IL Manager.

5. User reads/signs facility users guides (FUGs) for the required IL functional groups.

6. User receives lab specific training from IL Personnel.

7. The lead process engineer submits a badge request to IL Manager for the user.

8. The training coordinator is notified by IL Manager to program the card reader to allow badge swipe access.

9. User receives equipment specific training from an authorized user. This training does not have to include all of the equipment in the IL, only what's needed by the user to complete the desired task. Subsequent training to follow as needed.

10. User demonstrates proficient operation of the tool to the tool owner. This occurs on an as-needed basis.

11. User is free to work unsupervised; however the buddy system may still apply depending on the operation and task.