Lithography Capabilities

• Ebeam Lithography System (JEOL JBX-6300fs — Room 1501)
  • Maximum 100 kV accelerating voltage.
  • Capable of producing nominal 20–30 nm features on a variety of both positive and negative ebeam resists.
  • Sample holders available to support substrate dimensions of 1 x 1 cm through 2.5 x 2.5 cm, and diameters of 2”, 3”, 4”, and 6”.

• Contact Aligner 1 (Suss MJB3 — Room 1523)
  • Front/Backside (IR), 4” mask plate, well suited for sample processing below 3”.
  • Single wavelength 400 nm (NUV), 20 mw/cm².
  • Contact modes include proximity, soft, hard and vacuum.

• Contact Aligner 3 (Suss MJB3 — Room 1523)
  • Front/Backside (IR), 4” mask plate, well suited for sample processing below 3”.
  • Single wavelength 400 nm (NUV), 20 mw/cm².
  • Contact modes include proximity, soft, hard and vacuum.
  • IR backside alignment capability.

• Contact Aligner 4 (Suss MA6 — Room 1523)
  • Front side only, 5” mask plate, well suited for processing of 2”, 3”, and 100 mm diameter substrates.
  • Single wavelength 400 nm (NUV), 20 mw/cm².
  • Contact modes include proximity, soft, hard and vacuum.
  • Backside alignment supported.

• Mask Writer 1 (Heidelberg Instruments DWL 66 fs Room — 1504)
  • Laser lithography system for high resolution pattern generation.
  • Can accommodate low volume 4” or 5” mask fabrication or direct write on basically any flat material coated with positive photoresist.
  • Minimum structure size 1–2 micron, maximum write area ranges from 100 mm² to 4900 mm² depending on resolution requirements.
  • Write time limited to 12 hours max, please consult tool owner for details.

• Mask Writer 2 (Heidelberg Instruments MLA150 Maskless Aligner — Room 1504)
  • Accommodates standard g-line photoresists including SU8, sample sizes from 4 mm to 200 mm, and up to 5 mm thick.
  • Front and backside processing of non-planar surfaces and materials (BSA >3” only).
  • Realtime correction and adjustment of write pattern to compensate for subsequent layer pattern shift, 40 minutes to complete a 100 mm write at 0.6 um resolution.
  • Set up to write including alignment in under 10 minutes, subsequent layers following set up in less than a minute to align.
  • Field alignment capabilities minimize registration errors.

• Spinner 1 and 2 (Headway Research PWM32/CB15 — Room 1523)
  • Accommodates 1 cm–150 mm substrates, 100–10,000 rpm spin speeds with acceleration rates ranging from 100–10,000 rpm/sec.
  • Nine preprogrammed recipes with one user definable recipe for process development, multistep programming possible.
  • Resists available – AZ5214E, AZ4330, AZ9260, AZ  nLOF 5510, AZ nLOF 2035, AZ nLOF 2070, LOR3A, NEB31, ZEP, HSQ, varieties of PMMA. Many resists can be thinned to meet specific requirements.

• Spinner 3 (Headway Research PWM32/R790 — Room 1523)
  • Accommodates 1 cm–100 mm, dedicated bowls for polymer processing. 100–10,000 rpm spin speeds with acceleration rates ranging from 100–10,000 rpm/sec.
  • Nine preprogrammed recipes with one user definable recipe for process development, multistep programming possible.

• Hotplate 1 (Brewer Science CEE 1000 — Room 1523)
  • Microprocessor controlled RT: 400°C with 0.1°C resolution with inert chamber and ramping temperature control.  Multi-substrate supports small sample, 3”, 100 mm, 125 mm, and 150 mm.

• Hotplate 2–5 (Fairweather Instruments — Room 1523)
  • Microprocessor controlled RT: 300°C vacuum hot plate, supports sample sizes up to 200 mm.

• Ovens 1-2 (Blue M — Room 1523)
  • Ambient processing up to 300°C, sample sizes up to 150 mm, multi-shelf.

• Ozone 1 (Uvocs T10X10 — Room 1523)
  • Benchtop UV-ozone cleaner for light descum or weak organic surface cleaning.

• Vac Oven 1 (JeioTech — Room 1523)
  • Vacuum oven with operating range of up to 250°C, and vacuum <50–100 mT@20°C and <125 mT@250°C, supports lithography related polymer baking needs. 

• YES1 (Updated YES3 — Room 1523)
  • HMDS vapor priming oven supporting lithography operations.