This instrument, in association with etch and deposition capabilities, provides powerful nanofabrication of a wide variety of materials and applications.

Capabilities include:

• Atomic resolution imaging, lithography, and spectroscopy via scanning tunneling microscopy (STM).
• Atomically-selective, single atom integration in nanoelectronic devices.
• Coupled to SiGe thin-film deposition via molecular beam epitaxy (MBE) for ultra-high vacuum encapsulation.
• User research support in quantum electronic materials, devices, and beyond (Moore’s Si
  nanoelectronics).

Contact: Ezra Bussmann

Research Highlights:
Atomic-precision advanced manufacturing for Si quantum computing.

Bussmann, E., Butera, R. E., Owen, J. H., Randall, J. N., Rinaldi, S. M., Baczewski, A. D.; Misra, S. MRS Bulletin 2021, 46 (7), 607–615. doi.org/10.1557/s43577-021-00139-8

Impact of incorporation kinetics on device fabrication with atomic precision

Ivie, J. A., Campbell, Q., Koepke, J. C., Brickson, M. I., Schultz, P. A., Muller, R. P., Mounce, A. M., Ward, D. R., Carroll, M. S., Bussmann, E., Baczewski, A. D.; Misra, S. Physical Review Applied 2021, 16 (5). doi.org/10.1103/physrevapplied.16.054037

Heterogeneous nucleation of pits via step pinning during Si (100) homoepitaxy

Yitamben, E. N., Butera, R. E., Swartzentruber, B. S., Simonson, R. J., Misra, S., Carroll, M. S.; Bussmann, E. New Journal of Physics 2017, 19 (11), 113023. doi.org/10.1088/1367-2630/aa9397

Ge diffusion at the Si (100) surface

Bussmann, E.; Swartzentruber, B. S. Physical Review Letters 2010, 104 (12). doi.org/10.1103/physrevlett.104.126101