The Ion Beam Laboratory offers radiation effects testing using ion irradiation, material and surface characterization using a series of in-situ ion beam analysis techniques, and nanofabrication of materials and devices through the use of focused ion beam irradiation and implantation.

Capabilities include:

• 8 operational accelerators covering a range of ion landing energies from <20 eV to 70 MeV.
• Each accelerator has access to a variety of in-situ characterization capabilities, including in-situ photoluminescence, single ion counting, 1200°C heating, cryogenic cooling.
• Two specialized mass velocity filtered (ExB) focused ion beam systems for implantation using ~1/3 of the periodic table of elements (see figure on the right for elements)
• Diamond-dedicated UHV annealer up to 1200°C and tube furnace with in-atmosphere annealing up to 1100°C.

Contact: Luca Basso

Research Highlights:

Ion Implantation of Magnesium Guests into Type II Silicon Clathrate Films: An Alternate Approach to Doping a Cage-Like Silicon Allotrope
Briggs, J.P.; Saiter, S.; Walker, M.; Su, S.S.; Titze, M.; Wang, Y.; Liu, Y.; Collins, R.T.; Singh, M.; Koh, C.A. Materials Advances 2026 7(1):289-300. doi.org/10.1039/D5MA00603A

All-Optical Reconfiguration of Single Silicon-Vacancy Centers in Diamond for Non-Volatile Memories
 Xue, Y.; Ni, X.; Titze, M.; Su, S.S.; Wu, B.; Zhang, L.; Cui, C.; Guha, S.; Eichenfield, M.; Fan, L.;  Nature Communications 2025, 16(1), 6275. doi.org/10.1038/s41467-025-61384-y

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide
Xue, Y.; Titze, M.; Mack, J.; Yang, Z.; Zhang, L.; Su, S.S.; Zhang, Z.; Fan, L. Nano Letters. 2024, 24(7):2369-75. doi.org/10.1103/PhysRevX.14.041008