Wafer-scale continuous two-dimensional materials synthesis capability provides materials platforms for defect engineering, emerging materials-based electronic/photonic device studies, and basic sciences/applications of two-dimensional materials.

Capabilities include:

• (Mo,W)(S,Se)2.
• 4” wafer-loadable cold wall reactor.
• Graphic user interface-based computerized control of the growth parameters using:
  • Substrate temperature
  • Reactor pressure
  • Precursor flow rate

Technical Specifications:

• Metalorganic chemical vapor deposition system with computerized control.
• Maximum loadable substrate: 4” in diameter.
• Vacuum system composed of a mechanical pump and a turbomolecular pump. Base pressure: 10^-6 Torr.
• Resistive heater, maximum substrate temperature is ~800^oC.
• 6 mass flow controllers for 4 precursors and 2 gas lines.

Contact: Jinkyoung Yoo